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公司简介COMPANY PROFILE
深圳海特微半导体有限公司

我们是一家致力于研究、开发、生产、销售具有国际先进技术的氮化镓(GaN)晶体材料衬底(wafer)的高科技企业,公司成立于 2017 年 12 月 20 日,注册资金 1000万元。公司经营团队由海归专家、清华、中科院等国内著名高校和研究机构的人士组成,拥有国际先进的氮化镓晶体材料生长技术、成熟的量产与管理经验。作为第三代半导体晶体材料氮化镓及其衬底片,主要应用在蓝绿激光、高性能 LED 和氮化镓RF和功率电子器件等领域。 


We are a high-tech enterprise dedicated to develop and deliver gallium nitride (GaN) crystal substrates with the latest ammonothermal  growth technology. The company was founded on December 20, 2017, with a registered capital of 10 million yuan. The company's management team is composed of industry  experts and personnel from Tsinghua University and Chinese Academy of Sciences, whose have the rich experience in GaN crystal growth technology, manufacture and management. As the third generation semiconductor material, GaN substrates are mainly used in blue-green laser diode, high performance LED, GaN RF and power electronic devices. 


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